This post explains for the MOSFET.
Metal Oxide Semiconductor Field Effect Transistor is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
Part Number: IRFZ44N
Functions: HEXFET Power MOSFET ( Vdss = 55V, Rds(on) = 17.5m Ohm, Id = 49A )
Package: TO-220AB
Manufacturer: International Rectifier
Image
Description
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
IRFZ44N Pinout
Features
1. Advanced Process Technology
2. Ultra Low On-Resistance
3. Dynamic dv/dt Rating
4. 175°C Operating Temperature
5. Fast Switching
6. Fully Avalanche Rated
Electrical Characteristics
IRFZ44N Datasheet
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