Part Number: IRL2203N
Function : HEXFET Power MOSFET
Package: TO-220AB Type
Manufacturer: IRF, Infineon
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Description
The IRL2203N is 30V, 116A, HEXFET Power MOSFET.
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Pinout
Features
1. Advanced Process Technology
2. Ultra Low On-Resistance
3. Dynamic dv/dt Rating
4. 175°C Operating Temperature
5. Fast Switching
6. Fully Avalanche Rated
7. Lead-Free
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 30 V
2. Gate to source voltage: VGSS = ± 16 V
3. Drain current: ID = 116 A
4. Power Dissipation: Pd = 180 W
5. Channel temperature: Tch = 175 °C
6. Storage temperature: Tstg = -55 to +175 °C
