This is one of the types of MOSFETs and is a kind of transistor.
Part Number: IRFZ46N
Function: 55V, 53A, HEXFET Power MOSFET
Package: TO-220AB Type
Manufacturer: International Rectifier ( www.irf.com )
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Description
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Absolute Maximum Ratings at Tc = 25°C
1. Continuous Drain Current : Vgs = 53 A
2. Pulsed Drain Current : Idm = 180 W
3. Power Dissipation: Pd = 107 V
4. Gate-to-Source Voltage : Vgs = ± 20 V
5. Avalanche Current : Iar = 28 A
6. Operating Junction and Storage Temperature Range : Tj, Tstg = -55 to + 175 °C
Pinouts
Features
1. Advanced Process Technology
2. Ultra Low On-Resistance
3. Dynamic dv/dt Rating
4. 175°C Operating Temperature
5. Fast Switching
6. Fully Avalanche Rated
Application
Other data sheets are available within the file: IRFZ46
IRFZ46N MOSFET Transistor Datasheet
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