K1118 PDF Datasheet – N-Ch, 600V, 6A, MOSFET – 2SK1118

The Full Part Number is 2SK1118.

The function of this semiconductor is 600V, Silicon N Channel MOSFET.

The package is TO-220 Type

The manufacturers of this product is Toshiba.

See the preview image and the PDF file for more information.

Preview images :

1 page
K1118 transistor pinout


The K1118 is 600V, Silicon N-Channel MOSFET(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.


1. 4-Volt Gate Drive

2. Low Drain-Source ON Resistance – Rds(on) = 0.95 Ohm ( Typ. )

3. High Forward Transfer Admittance

4. Low Leakage Current

5. Enhancement-Mode

K1118 pdf datasheet

Absolute Maximum Ratings ( Ta = 25°C )

1. Drain-Source Voltage : Vdss = 600V

2. Drain-Gate Voltage : Vdgr = 600V

3. Gate-Source Voltage : Vgss = ± 30V

4. Drain Current : Id =6 A

4. Drain Power Dissipation: Pd = 45 W ( Tc = 25°C )

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C



1. High Speed, High Current DC-DC Converter

2. Relay Drive and Motor Drive

K1118 PDF Datasheet


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