The Full Part Number is 2SK1118.
The function of this semiconductor is 600V, Silicon N Channel MOSFET.
The package is TO-220 Type
The manufacturers of this product is Toshiba.
See the preview image and the PDF file for more information.
Preview images :
1 page
Description
The K1118 is 600V, Silicon N-Channel MOSFET(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
Features
1. 4-Volt Gate Drive
2. Low Drain-Source ON Resistance – Rds(on) = 0.95 Ohm ( Typ. )
3. High Forward Transfer Admittance
4. Low Leakage Current
5. Enhancement-Mode
Absolute Maximum Ratings ( Ta = 25°C )
1. Drain-Source Voltage : Vdss = 600V
2. Drain-Gate Voltage : Vdgr = 600V
3. Gate-Source Voltage : Vgss = ± 30V
4. Drain Current : Id =6 A
4. Drain Power Dissipation: Pd = 45 W ( Tc = 25°C )
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. High Speed, High Current DC-DC Converter
2. Relay Drive and Motor Drive
K1118 PDF Datasheet
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