K13A600 Datasheet – 600V, 13A, MOSFET ( Transistor )

This is Silicon N-Channel MOSFET.

Part Number: K13A600, TK13A600

Correct Number : K13A60D, TK13A60D

Package: TO-220 Type

Manufacturer: Toshiba

Image:

K13A600 mosfet

Description

This is 600V, 13A, N-Channel MOSFET.

Features

1. Low drain-source ON-resistance: RDS (ON)= 0.33 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 6.5 S (typ.)

3. Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)

4.  Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

K13A600 Pinout

K13A600 datasheet pinout

Absolute Maximum Ratings ( Ta = 25º C )

1. Drain-source voltage : VDSS = 600 V
2. Drain power dissipation :  PD = 50 W
3. Single pulse avalanche energy : Eas = 511 mJ
4. Channel temperature: Tch = 150 °C
5. Storage temperature range : Tstg = -55 to 150 °C

 

Electrical Characteristics

K13A600 Marking

Applications:

1. Switching Regulator

K13A600 Datasheet

 

K13A600 pdf

 

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