This is Silicon N-Channel MOSFET.
Part Number: K13A600, TK13A600
Correct Number : K13A60D, TK13A60D
Package: TO-220 Type
Manufacturer: Toshiba
Image:
Description
This is 600V, 13A, N-Channel MOSFET.
Features
1. Low drain-source ON-resistance: RDS (ON)= 0.33 Ω(typ.)
2. High forward transfer admittance: |Yfs| = 6.5 S (typ.)
3. Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
K13A600 Pinout
Absolute Maximum Ratings ( Ta = 25º C )
1. Drain-source voltage : VDSS = 600 V
2. Drain power dissipation : PD = 50 W
3. Single pulse avalanche energy : Eas = 511 mJ
4. Channel temperature: Tch = 150 °C
5. Storage temperature range : Tstg = -55 to 150 °C
Electrical Characteristics
Applications:
1. Switching Regulator
K13A600 Datasheet