This is one of the types of MOSFETs and is a kind of transistor.
Part Number: K16A60W
Function: 600V, 15.8A, N-Channel MOSFET
Package: TO-220SIS Type
Manufacturer: Toshiba Semiconductor
Images:
Description
The K16A60W is Silicon N-Channel MOSFET, Transistor.
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 15.8 A
4. Drain power dissipation : PD = 40 W
5. Single pulse avalanche energy : Eas = 231 mJ
6. Avalanche curren : Iar = 4 A
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg = -55 to +150 °C
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K16A60W Pinout
Applications:
1. Switching Voltage Regulators
Other data sheets are available within the file: TK16A60W
