Part Number: K1933
Function: 10A, 900V, Silicon N-Channel MOSFET
Package: TO-3P Type
Manufacturer: Hitachi ( Renesas Electronics )
Image and Pinouts:
Description
This is 900V, 10A, N-Channel MOSFET.
Features
1. Low on-resistance
2. High speed switching
3. No secondary breakdown
4. Suitable for Switching regulator
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 900 V
2. Gate to source voltage: VGSS = ±30 V
3. Drain current: ID = 10 A
4. Drain peak current : ID(pulse) = 30 A
5. Body to drain diode reverse drain current : IDR = 10 A
6. Channel dissipation: Pch = 150 W
Application
1. High speed power switching
Other data sheets are available within the file: 2SK1933
K1933 Datasheet PDF Download
