K30N60HS PDF Datasheet – 600V, 30A, IGBT – Infineon

This post explains for the IGBT.

The Part Number is K30N60HS, SKW30N60HS.

The function of this semiconductor is 600V, 30A, IGBT.

The package is TO-247-3 Type

Manufacturer: Infineon

Preview images :

K30N60HS datasheet igbt

Description

The K30N60HS is High Speed IGBT in NPT-technology.

Features

• 30% lower Eoff compared to previous generation

• Short circuit withstand time – 10 µs

• Designed for operation above 30 kHz

• NPT-Technology for 600V applications offers :
– parallel switching capability
– moderate Eoff increase with temperature
– very tight parameter distribution

• High ruggedness, temperature stable behaviour

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC1 for target applications

• Complete product spectrum and PSpice Models

 

1 page
K30N60HS image

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Absolute Maximum Ratings (Ta = 25°C)

1. Collector-emitter voltage : Vce = 600 V

2. DC collector current = 30 A (Tc = 25°C)

3. Power dissipation : Ptot = 250 W

4. Operating junction and storage temperature : Tj, Tsg = -55 ~ +150°C

 

K30N60HS Datasheet