This post explains for the IGBT.
The Part Number is K30N60HS, SKW30N60HS.
The function of this semiconductor is 600V, 30A, IGBT.
The package is TO-247-3 Type
Manufacturer: Infineon
Preview images :
Description
The K30N60HS is High Speed IGBT in NPT-technology. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
Features
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers :
– parallel switching capability
– moderate Eoff increase with temperature
– very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models
1 page
Absolute Maximum Ratings (Ta = 25°C)
1. Collector-emitter voltage : Vce = 600 V
2. DC collector current = 30 A (Tc = 25°C)
3. Power dissipation : Ptot = 250 W
4. Operating junction and storage temperature : Tj, Tsg = -55 ~ +150°C
K30N60HS PDF Datasheet
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