K3868 PDF Datasheet – 500V, 5A, N-ch, MOSFET – Toshiba

This post explains for the MOSFET.

The Part Number is K3868, 2SK3868.

The function of this semiconductor is 500V, 5A, N-channel MOSFET.

Manufacturer: Toshiba Semiconductor

Preview images :

1 page ( Pinouts: 1. Gate, 2. Drain, 3 Source )
K3868 image

Description

This is Silicon N-Channel MOS Type Field Effect Transistor.

 

Features

1. Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ.)

2. High forward transfer admittance: |Yfs| = 3 S (typ.)

3. Low leakage current: IDSS = 100 μA (VDS = 500 V)

4. Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 5 A

4. Drain Power Dissipation: Pd = 35 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

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2 page
pinout

Applications:

1. Switching Regulator

K3868 Datasheet