Part Number: K3142
Function: 60A, 30V, Silicon N Channel MOSFET
Package: TO-220 Type
Manufacturer: Hitachi ( Renesas Electronics )
Images :
Description
1. Low on-resistance : RDS(on) = 4mΩ typ.
2. Low drive current
3. 4V gate drive device can be driven from 5V source
Pinouts:
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 30 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 60 A
4. Drain peak current : ID(pulse) = 240 A
5. Body-drain diode reverse drain current : IDR = 60 A
6. Avalanche current : IAP = 35 A
7. Avalanche energy : EAR = 122 mJ
8. Channel dissipation: Pch = 35 W
9. Channel temperature: Tch = 150 °C
10. Storage temperature : Tstg = -55 to +150 °C
Applications
1. High Speed Power Switching
Other data sheets are available within the file: 2SK3142
K3142 Datasheet PDF Download
