K3568 Datasheet – 500V, 12A, N-Ch, MOSFET – Toshiba

Part Number: K3568, 2SK3568

Function: 500V, 12A, N-Channel MOSFET

Package: 2-10U1B type

Manufacturer: Toshiba Semiconductor


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K3568 datasheet image


This is Silicon N Channel MOS Type (π-MOSVI) FET.


• Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.)
• High forward transfer admittance: |Yfs| = 8.5S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 500 V
2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 500 V
3. Gate-source voltage: VGSS = ±30 V

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).


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K3568 transistor image


1. Switching Regulator

K3568 Datasheet