K4110 PDF – 600V, N-Ch MOSFET – 2SK4110 – Toshiba

K4110 is one of the semiconductor types.

The full part number is 2SK4110.

The function of this semiconductor is 600V, N Channel MOSFET.

The manufacturers of this product is Toshiba.

See the preview image and the PDF file for more information.

Preview images :

K4110 pinout datasheet

Description

A 600V N-channel MOSFET refers to a specific type of N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) that can handle a maximum voltage of 600 volts between its drain and source terminals. MOSFETs are widely used in various electronic applications for their switching and amplification capabilities.

N-channel MOSFETs with high voltage ratings like 600V are commonly used in applications that require switching or controlling higher voltage levels, such as in power supplies, motor drives, inverters, and high-voltage circuits. They offer advantages like low on-resistance (RDS(on)), fast switching speeds, and low gate drive requirements.

Features:

• Low drain-source ON resistance: RDS (ON) = 0.9 Ω (typ.)
• High forward transfer admittance: |Yfs| = 5.0 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 600 V
2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 600 V
3. Gate-source voltage: VGSS = ±30 V
4. Drain current : DC (Note 1) ID = 6A,  Pulse (t = 1 ms) (Note 1)  IDP = 24 A
5. Drain power dissipation (Tc = 25°C): PD = 40 W
6. Single pulse avalanche energy (Note 2) : EAS = 345 mJ
7. Avalanche current : IAR = 6 A
8. Repetitive avalanche energy (Note 3) : EAR = 4 mJ
9. Channel temperature: Tch = 150 °C
10. Storage temperature range : Tstg = -55 to 150 °C

Applications:

1. Switching Regulator

K4110 pdf mosfet

K4110 PDF Datasheet

 

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