Part Number: RJP30E4, RJP30E4DPE
Function: Si-N IGBT, 360V, 35A, (200App) 75W Tf
Image: TO-263 Package
Manufacturer: Panasonic, Renesas
Image
Description
RJP30E4 is 360V, 40A, IGBT. The IGBT is insulated-gate bipolar transistor.
It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
Features
1. RJP30E4 TRANSISTOR, B1JBEN000002 Transistor
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-Source Voltage (VCES) : 360 V
2. Collector Current (IC) ; 40 A
3. Collector Current Pulsed (IC(peak)) : 250A
4. Gate-Emitter Voltage (VGES) : +-30V
5. Power Dissipation (PD) : 30 W
Applications:
1. High Speed Power Switching
RJP30E4 Datasheet
Reference Datasheet PDF RJP30E3
http://www.electronica-usa.com/graphics/RJP30E3.pdf
B1JBEN000002 Datasheet
RJP30E3DPP-M0 Datasheet
RJP30E2DPK-M0 Datasheet
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