Part Number: RJP30E4, RJP30E4DPE
Function: Si-N IGBT, 360V, 35A, (200App) 75W Tf
Image: TO-263 Package
Manufacturer: Panasonic, Renesas
Image
Description
This is 360V, 40A, IGBT. The IGBT is insulated-gate bipolar transistor.
Features
1. RJP30E4 TRANSISTOR, B1JBEN000002 Transistor
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-Source Voltage (VCES) : 360 V
2. Collector Current (IC) ; 40 A
3. Collector Current Pulsed (IC(peak)) : 250A
4. Gate-Emitter Voltage (VGES) : +-30V
5. Power Dissipation (PD) : 30 W
Applications:
1. High Speed Power Switching
RJP30E4 Datasheet
Reference Datasheet PDF RJP30E3
http://www.electronica-usa.com/graphics/RJP30E3.pdf
B1JBEN000002 Datasheet
RJP30E3DPP-M0 Datasheet
RJP30E2DPK-M0 Datasheet
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