RJP30E4 Datasheet PDF – 360V, 35A, IGBT, TO-263 Type

Part Number: RJP30E4, RJP30E4DPE

Function: Si-N IGBT, 360V, 35A, (200App) 75W Tf

Image: TO-263 Package

Manufacturer: Panasonic, Renesas




RJP30E4 is 360V, 40A, IGBT. The IGBT is insulated-gate bipolar transistor.

It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.


1. RJP30E4 TRANSISTOR, B1JBEN000002 Transistor

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-Source Voltage (VCES) : 360 V

2. Collector Current (IC) ; 40 A

3. Collector Current Pulsed (IC(peak)) : 250A

4. Gate-Emitter Voltage (VGES) : +-30V

5. Power Dissipation (PD) : 30 W


1. High Speed Power Switching

RJP30E4 Datasheet

Reference Datasheet PDF RJP30E3


B1JBEN000002 Datasheet

B1JBEN000002 pinout

B1JBEN000002 pdf

RJP30E3DPP-M0 Datasheet

RJP30E2DPK-M0 Datasheet

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