LDTS24A Datasheet PDF – 24V, TVS, Diode, Rectifier

Part Number: LDTS24A

Function: 24V, 3000 Watt, Diode, Rectifier ( Transient Voltage Suppressor )

Package: TO-3, TO-204AD Type

Manufacturer: Microsemi Corporation

Image:

LDTS24A datasheet

 

Description

This LDTS24A series is used in automotive and vehicular applications where further protection may be required for load-dump and field-decay transients. This type of protection is needed when the battery is disconnected while the engine and alternator are still operating. This produces prolonged severe transients requiring additional transient voltage suppressor design considerations beyond those ratings specified for other conventional TVS components.

Features

1. Unidirectional TVS series DC power applications

2. Low Clamping ratio

3. Working voltage(Vwm) range of 14 volts to 48volts

4. Hermetically sealed TO-3 package

5. Low thermal resistance

6. Dissiptes heat from prolonged transients

7. Consult factory for other package options including surface mount

 

Absolute Maximum Ratings

1. 3000 Watts of Peak Pulse Power dissipation at 50 ms

2 T clamping (0 volts to V(BR) min.): Less than 100 pico seconds (theoretical)

3. Storage temperature : -50 to +200 °C

4. Operating temperature : -50 to +175 °C

 

Other data sheets are available within the file: LDTS14, LDTS14A, LDTS24, LDTS30

LDTS24A Datasheet PDF Download


LDTS24A pdf

 

BAW56 Datasheet PDF – 85V, Switching Diode – Rectron

Part Number: BAW56

Function: Switching Diode, DUAL 1N4148 COMMON ANODE DIODE

Package: SOT-23 Type

Manufacturer: Rectron Semiconductor

Pinouts:

BAW56 datasheet

BAW56 is a small signal diode, used in various applications in electronic circuits. This diode is mainly used for rectification, switching, clipping, protection, etc., and is particularly suitable for high-frequency signal processing.

Features

1. High-speed switching: This diode has high-speed switching characteristics, making it suitable for high-frequency applications.

2. Low leakage current: Low leakage current at low voltage ensures efficient power consumption.

3. Bipolar operation: It can be used with NPN and PNP transistors.

Absolute Maximum Ratings (Ta=25°C)

1. Reverse Voltage : VRRM = 85 V

2. Reverse Recovery Time : trr = 4 ns

3. Forward Voltage @ If = 50 mA : VF = 1.0 V

4. Forward Current : IF = 215 mA

5. Junction Temp. : Tj = -55 to 150 °C

6. Storage Temp. : Tstg = -55 to 150 °C

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BAW56 Datasheet PDF Download


BAW56 pdf

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