RJH3044 Datasheet PDF – 360V, 30A, IGBT – Renesas

Part Number: RJH3044

Function: Silicon N channel IGBT, 360V, 30A

Package: TO-220 Type

Manufacturer: Renesas, Hitachi

Image : RJH3044

Description

The RJH3044 is a silicon N channel IGBT. It has high speed power switching.

Parametrics

Absolute maximum ratings:

(1) collector to emitter voltage : 360V
(2) Gate to emitter voltage : ±30V
(3) collector current : 30A
(4) collector peak current : 200A
(5) collector to emitter diode forward peak current : 100A
(6) collector dissipation : 20W
(7) junction temperature : 150℃
(8)storage temperature : -55 to 150℃.

 

Features

(1) trench gate and thin wafer technology;
(2) high speed switching;
(3) low collector to emitter saturation voltage;
(4) low leak current;
(5) built-in fast recovery diode;
(6) isolated package.

RJH3044 Datasheet

RJH-3044 pdf

RJH3044 datasheet

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FF900R12IP4 Datasheet PDF – 1200V, 900A, IGBT Module

Part Number: FF900R12IP4

Function: IGBT / VCES= 1200V, 900A

Package: Module Type

Manufacturer: Infineon Technologies

Image:

FF900R12IP4 datasheet

Description

This is 1200V, 900A, IGBT. The IGBT is insulated-gate bipolar transistor.

PrimePACK 2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

Typical Applications:

• Auxiliary Inverters
• High Power Converters
• Motor Drives
• Traction Drives
• UPS Systems
• Wind Turbines

Pinout

components

Electrical

Features

• Extended Operation Temperature Tvj op
• High Short Circuit Capability, Self Limiting Short Circuit Current
• Unbeatable Robustness

Mechanical

Features

• 4 kV AC 1min Insulation
• High Creepage and Clearance Distances
• High Power and Thermal Cycling Capability

Other data sheets are available within the file: FF900R12IP4BOSA2

 

FF900R12IP4 Datasheet PDF Download


FF900R12IP4 pdf