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IRG7PK35UD1PBF Datasheet – 1400V, 40A, IGBT ( PDF )

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Part Number: IRG7PK35UD1PBF

Function: 1.4kV, 40A, Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

Package: TO-247AC Type

Manufacturer: International Rectifier

Image and Pinouts:

IRG7PK35UD1PBF datasheet

 

Description

This is Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode.

Features

1. V ces = 1400V

2. Ic = 20A, Tc = 100 °C

3. Tj(max) = 150 °C

4. Vce(on) typ. = 2.0V @ Ic = 20A

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 1400 V

2. Maximum Power dissipation : Pc = 167 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -40 to +150 °C

Applications

1. Induction heating

2. Microwave ovens

3. Soft switching applications

Other data sheets are available within the file:

IRG7PK35UD1-EPBF, IRG7PK35

 

IRG7PK35UD1PBF Datasheet PDF Download


IRG7PK35UD1PBF pdf

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DG402RP Datasheet – 430V, 40A, N-ch, IGBT, TO-220 – Panasonic

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Part Number: DG402RP, DG3D4020CSRP

Function: 430V, 40A, IGBT for LCD TV Plasma

Manufacturer: Panasonic

Package: TO-220 Type

Image:

DG402RP datasheet

Description

This is 430V, 40A, Silicon N-channel enhancement IGBT.

Features

1. Type Designator : 2PG006(DG402RP)
2. Type of IGBT channel : N-Channel

Absolute Maximum Ratings (Ta = 25°C)

1. Maximum power dissipation (Pc) of IGBT transistor, W: 40
2. Maximum collector-emitter voltage |Vces|, V: 430
3. Collector-emitter saturation voltage |Ucesat|, V: 1.75
4. Maximum gate-emitter voltage |Ueg|, V: 30
5. Maximum collector current |Ic|, A: 40
6. Maximum junction temperature (Tj), °C: 150
7. Rise time, nS: 400
8. Maximum collector capacity (Cc), pF: 130
9. Package: TO220

 

Applications:

1. For plasma display panel drive

2. For high speed switching circuits

DG402RP Datasheet

DG402RP = 2PG006

2PG006 Datasheet

DG402RP pdf