UCC27531 Datasheet PDF – FET and IGBT Single-Gate Driver

Part Number: UCC27531

Function: 35-V max VDD FET and IGBT Single-Gate Driver

Package: SOIC 8 Pin Type

Manufacturer: Texas Instruments

Pinouts:
UCC27531 datasheet

Description

The UCC27531, UCC2753x family of devices are single-channel, high-speed, gate drivers capable of effectively driving MOSFET and IGBT power switches by up to 2.5-A source and 5-A sink (asymmetrical drive) peak current. Strong sink capability in asymmetrical drive boosts immunity against parasitic Miller turn-on effect.

The UCC2753x device can also feature a split-output configuration where the gate-drive current is sourced through OUTH pin and sunk through OUTL pin. This pin arrangement allows the user to apply independent turn-on and turn-off resistors to the OUTH and OUTL pins respectively and easily control the switching slew rates.

Block Diagram

components

Features

• Low-cost gate driver (offering optimal solution for driving FET and IGBTs)

• Superior replacement to discrete transistor pair drive (providing easy interface with controller)

• TTL and CMOS compatible input logic threshold (independent of supply voltage)

• Split output options allow for tuning of turnon and turnoff currents

• Inverting and noninverting input configurations

• Enable with fixed TTL compatible threshold

 

UCC27531 Datasheet PDF Download


UCC27531 pdf

Other data sheets are available within the file: 7531, 7533, 7536,7 537, 7538

20N60A4D Datasheet – 600V, 70A, N-channel IGBT ( PDF )

This is one of the transistor types.

The IGBT is insulated-gate bipolar transistor.

Part Number: 20N60A4D, HGTG20N60A4D

Function: 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Package: TO-247 Type

Manufacturer: Fairchild

Image

20N60A4D image

Description

The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 °C and 150 °C.  The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.

20N60A4D Pinout

20N60A4D datasheet pinout

Features

• >100kHz Operation At 390V, 20A

• 200kHz Operation At 390V, 12A

• 600V Switching SOA Capability

• Low Conduction Loss

20N60A4D Datasheet


 

Related articles across the web