igbt

K75T60 Datasheet – 600V, 75A, IGBT – Infineon ( PDF )

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K75T60, IKW75N60T

Function: IGBT in TRENCHSTOP and Fieldstop technology

Package: PG-TO247-3 Type

Manufacturer: Infineon Technologies

Image:

K75T60 IGBT IKW75N60T

( IKW75N60T, Marking : K75T60 )

Description

This is 600V, 75A, IGBT.

Features

1. Very low VCE(sat) 1.5V (typ.)
2. Maximum Junction Temperature 175°C
3. Short circuit withstand time 5 us
4. Positive temperature coefficient in VCE(sat)
5. very tight parameter distribution
6. high ruggedness, temperature stable behaviour
7. very high switching speed
8. Low EMI
9. Very soft, fast recovery anti-parallel Emitter Controlled HE diode
10. Qualified according to JEDEC for target applications
11. Pb-free lead plating; RoHS compliant

K75T60 Pinouts:

K75T60 datasheet

Applications:

1. Frequency Converters

2. Uninterrupted Power Supply

K75T60 Datasheet

K75T60 pdf

Other data sheets are available within the file: IKW75N60T


 

30F121 Transistor – 300V, 120A, IGBT ( Datasheet PDF )

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Part Number: 30F121, GT30F121

Function: 300V, 120A, IGBT, Plasma Display Panel Applications

Package: TO-220SIS Type

Manufacturer: Toshiba

Pinouts:

30F121 Pinout

Image

30F121 datasheet

Description

30F121 is 300V, 120A, IGBT.

30F121 PDF Datasheet

Features of the Toshiba Discrete IGBTs

IGBT: Insulated Gate Bipolar Transistor

1.  IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
advantage of high-voltage drive.

2. The conductivity modulation characteristics of a bipolar transistor make it ideal for load control
applications that require high breakdown voltage and high current.

3. Toshiba offers a family of fast switching IGBTs, which are low injection and recombination in the
carrier.

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in
inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible
power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

(1) IGBTs also featuring fast switching

(2) Low collector-emitter saturation voltage even in the large current area

(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications

(4) High input impedance allows voltage drives

(5) Available in a variety of packages

Other data sheets are available within the file: 35F121, 30F122, GT30F121

30F121 Datasheet PDF Download

30F121 pdf


 

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