igbt archives - Page 109 of 265

Features

1. The Electrodes are isolated from case.

2. High input impedance

3. Includes a complete half bridge in one package.

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector dissipation : Pc = 1800 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -40 to +150 °C

Applications:

1. HIGH POWER SWITCHING

2. MOTOR CONTROL

Part Number: RJH60F5DPQ

Function: 600V, 80A, Silicon N Channel IGBT

Package: TO-247A Type

Image and Pinouts:

RJH60F5DPQ datasheet

Description

This is N-Channel IGBT. ( 600V / 80A / IGBT )

1. Low collector to emitter saturation voltage :
VCE(sat)= 1.37 V typ. (IC= 40 A, VGE= 15 V, Ta = 25°C)

2. Built in fast recovery diode in one package

3. Trench gate and thin wafer technology

4. High speed switching tr= 85 ns typ.
(at IC= 30 A, VCE= 400 V, VGE= 15 V, Rg = 5 , Ta = 25°C, inductive load)

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 30 V

3. Collector current : Ic = 80 A

4. Collector dissipation : Pc = 260.4 W

5. Junction temperature : Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. High Speed Power Switching

Other data sheets are available within the file: RJH60F5, RJH60F5-DPQ, RJH60F5DPQ-A0