igbt

RJH30E2 Datasheet – 360V, 30A, IGBT ( PDF ) – Renesas

Posted on by pinout

Part Number: RJH30E2

Function: 360V, 30A, IGBT

Package: TO-220 Type

Manufacturer: Renesas

Images:
RJH30E2

Description

This is 360V, 30A, Insulated-gate bipolar transistor.

Features

(1) Trench gate and thin wafer technology (G6H-II series)

(2) High speed switching: tr =80 ns typ., tf = 150 ns typ.

(3) Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

(4) Low leak current: ICES = 1 mA max.

(5) Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.

(6) Isolated package: TO-220FL.

RJH30E2 Renesas IGBT Vces = 360V, IC = 30A

RJH30E2 Image

Related articles across the web

GT30F122 Datasheet PDF – 300V, 120A IGBT, 30F122, Toshiba

Posted on by pinout

Part Number: GT30F122

Function: IGBT / Insulated Gate Bipolar Transistor, 300V, 120A, Silicon N-Channel

Package: TO-220SIS Type

Manufacturer: Toshiba

Image :
GT30F122

Description

The GT30F122 is 300V, 120A, Insulated Gate Bipolar Transistor.

GT30F122 Datasheet

Pinout

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

(1) IGBTs also featuring fast switching

(2) Low collector-emitter saturation voltage even in the large current area

(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications

(4) High input impedance allows voltage drives

(5) Available in a variety of packages

GT30F122 Datasheet
30F122 pdf

Other data sheets are available within the file: 30F122

Related articles across the web