Part Number: G4BC20F

Function: 600V, 9A, Fast Speed IGBT

Package: TO-220AB Type

Manufacturer: International Rectifier

Image and Pinouts:

 

Description

This is 600V, 9A, Fast IGBT ( insulated-gate bipolar transistor ).

Features

1. Fast : Optimized for medium operating frequencies

2. Generation 4 IGBT design provieds tighter parameter distribution and higher efficiency than Generation 3

3. Industry standard TO-220AB Package.

4. Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs

Benefits :

1. Generation 4 IGBTs offer highest efficiency available

2. IGBTs optimized for specified application conditions

3. Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 16 A

4. Collector dissipation : Pc = 60 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: IRG4BC20FDPBF, IRG4BC20F

 

G4BC20F Datasheet PDF Download

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• General-Purpose Operational Amplifier

Part Number: IRG4PC50UD

Function: 600V, 55A, Ultra Fast IGBT

Package: TO-247AC Type

Manufacturer: International Rectifier

Image and Pinouts:

 

Description

This is N-Channel 600V, 55A, IGBT WITH ULTRAFAST SOFT RECOVERY DIODE.

The IGBT is insulated-gate bipolar transistor.

 

Benefits :

1. Generation 4 IGBTs offer highest efficiencies available

2. IGBTs optimized for specific application conditions

3. HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing

4. Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs

Features

1. UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode

2. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
Generation 3

3. IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

4. Industry standard TO-247AC package

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 55 A (Tc = 25°C)

4. Maximum Power Dissipation: Pd = 200 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: IRG4PC50, IRG4PC50U

 

IRG4PC50UD Datasheet PDF Download