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RJH30 Datasheet PDF – N-Ch, 360V, 30A, IGBT, RJH30H1DPP

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Part Number: RJH30

Function: 360V, 30A, N-Channel IGBT

Package: TO-220FL Type

Manufacturer: Renesas Electronics

Image:

RJH30 datasheet

 

Description

This is 360V, 30A, Silicon N Channel IGBT. The IGBT is insulated-gate bipolar transistor.

Features

1. Trench gate and thin wafer technology (G6H-II series),

2. High speed switching: tr =80 ns typ., tf = 150 ns typ.,

3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

4. Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.

 

Absolute Maximum Ratings (Tc = 25°C)

1. Collector to emitter voltage : VCES = 360 V

2. Gate to emitter voltage : VGES = ±30 V

3. Collector current : IC = 30 A

4. Collector peak current : ic(peak) = 200 A

5. Collector dissipation : PC = 20 W

6. Channel temperature: Tch = 150 °C

7. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. High speed power switching

Other data sheets are available within the file: RJH-30, RJH30H1DPP-M0

 

RJH30 Datasheet PDF Download


RJH30 pdf

G4PC40UD Datasheet PDF – 600V, 40A, UltraFast IGBT – IR

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This is one of the semiconductor types.

This part name is IRG4PC40UD, G4PC40UD.

This product has 600V, 40V, UltraFast IGBT functions.

The package is TO-247AC Type

The manufacturers of this product is International Rectifier.

See the preview image and the PDF file for more information.

Image and Pinouts:

G4PC40UD datasheet

Description

The G4PC40UD is N-Channel, 600V, 40A, UltraFast IGBT.

The IGBT is insulated-gate bipolar transistor.

Features

1. UltraFast : Optimized for high operating frequencies 8-40 kHz in hard switching, >200  kHz in resonant mode

2. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

3. IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

4. Industry standard TO-247AC package

Benefits :

1. Generation-4 IGBT’s offer highest efficiencies available

2. IGBT’s optimized for specific application conditions

3. HEXFRED diodes optimized for performance with IGBT’s . Minimized recovery characteristics require less/no snubbing

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 40 A (Tc = 25°C)

4. Collector dissipation : Pd = 160 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

G4PC40UD Datasheet PDF Download

G4PC40UD pdf

Other data sheets are available within the file: G4PC40, IRG4PC40UD