DG302 Datasheet PDF – 330V, 250A, IGBT, Transistor, MOSFET

This is one of the IGBT types.

This part name is DG302.

This product has 330V IGBT, Ultra-Fast Power Transistor functions.

The pacakge is TO-220C-G2.

The manufacturer of the product is Panasonic.

Image: DG302 igbt transistor

Description

This is 330V, 250A, IGBT. The IGBT is insulated-gate bipolar transistor.

DG3C301 ( DG3C3010CL ) marking DG301.
DG3C302 ( DG3C3020CL ) marking DG302.

VCES 330(V), IC 45 (A) , ICP(A) 250A, VCE(sat) 1.3v, tf 240 ns

DG3C302 DG3C3020CL DG302 IGBT

Some of the text files within the PDF file :

IGBTs for driving PDPs that respond to the high-speed switching characteristics and low loss characteristics demands that accompany reduced power consumption and higher video quality. We have achieved the ideal IGBTs for driving PDPs by taking full advantage of the IGBT characteristic of low power loss in the high current region compared to power MOSFETs.

DG3C302 Datasheet, DG301 Datasheet

Points on Appeal (Features)

1. Can control high currents.
2. Heat generation during circuit operation is minimized through high-speed switching and low VCE(sat) characteristics

Applications:

1. PDP Panel Control Unit

DG302 Datasheet

DG3C3020CL pdf

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G4BC30KD Datasheet PDF – 600V, 16A, Ultra Fast IGBT – IR

Part Number: G4BC30KD, IRG4BC30KD

Function: 600V, 16A, IGBT

Package: TO-220AB Type

Manufacturer: International Rectifier

Image:

G4BC30KD igbt

Description

This is 600V, 16A, IGBT With Ultrafast Soft Recovery Diode.

Benefits :

1. Latest generation 4 IGBTs offer highest power density motor controls possible

2. HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI andswitching losses

3. This part replaces the IRGBC30KD2 and IRGBC30MD2 products

Pinout

G4BC30KD datasheet pinout

 

Features

1. High short circuit rating optimized for motor control, tsc=10µs, @360V VCE(start), TJ= 125°C,VGE= 15V

2. Combines low conduction losses with high switching speed

3. Tighter parameter distribution and higher efficiency than previous generations

4 IGBT co-packaged with HEXFRED ultrafast, ultrasoft recovery antiparallel diodes

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 16 A (Tc = 100°C)

4. Collector dissipation : Pc = 100 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

 

G4BC30KD Datasheet PDF


 

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