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Description

The 3MBI150U-120 is 1200V, 150A IGBT. The IGBT is insulated-gate bipolar transistor.

Featues :

1. High speed switching

2. Voltage drive

3. Low inductance module structure

Absolute maximum ratings (at Tc=25°C )

1. Collector-Emitter voltage: Vces = 1200 V

2. Gate-Emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 150 A (Tc=80°C )

3. Collector Power Dissipation : Pc = 735 W

Applications:

1. Inverter for Motor drive

2. AC and DC Servo drive amplifier

3. Uninterruptible power supply

4. Industrial machines, such as Welding machines

Other data sheets are available within the file: 3MBI150U120

This post explains for the IGBT.

The Part Number is G4PF50W, IRG4PF50W.

The function of this semiconductor is 900V, 51A, IGBT.

Manufacturer: International Rectifier

Image and Pinout

G4PF50W datasheet igbt

Features

1. Optimized for use in Welding and Switch-Mode Power Supply applications

2. Industry benchmark switching losses improve efficiency of all power supply topologies

3. 50% reduction of Eoff parameter

4. Low IGBT conduction losses

5. Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability

Benefits :

1. Lower switching losses allow more cost-effective operation and hence efficient replacement of larger-die MOSFETs up to 100kHz

2. Of particular benefit in single-ended converters and Power Supplies 150W and higher

[…]

Absolute Maximum Ratings :

1. Collector to emitter voltage: Vces = 900 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 51 A

4. Collector dissipation : Pc = 200 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

G4PF50W transistor

igbt

3MBI150U-120 Datasheet PDF – 1200V, 150A, IGBT – Fuji

Description

3MBI150U-120 Datasheet PDF Download

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G4PF50W PDF Datasheet – IRG4PF50W ( 900V, 51A, IGBT )

Features

G4PF50W Datasheet

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