Part Number: K4013, 2SK4013

Function: 800V, 6A, N-Channel MOSFET, Transistor

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor

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Description

K4013 is 800V, 6A, Silicon N Channel MOS Type Field Effect Transistor.

Features

1. Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.)

2. High forward transfer admittance: |Yfs| = 5.0 S (typ.)

3. Low leakage current: IDSS = 100 μA (max) (VDS = 640 V)

4. Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 800 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 6 A

4. Drain Power Dissipation: Pd = 45 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

 

K4013 PDF Datasheet

Part Number: K3115, 2SK3115

Function: 600V, 6A, N-channel Power MOSFET

Package: TO-220 Type

Manufacturer: NEC

Images:

Description

The K3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and designed for high voltage applications such as switching power supply, AC adapter.

Features

1. Low gate charge : QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)

2. Gate voltage rating ±30 V

3. Low on-state resistance : RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)

4. Avalanche capability ratings

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 6 A

4. Total Power Dissipation: Pd = 2 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

K3115 PDF Datasheet