IRLR3105 MOSFET – 55V Single N-Channel MOSFET

IRLR3105 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in power management applications, particularly in switching circuits. It is a member of the HEXFET series of power MOSFETs manufactured by Infineon Technologies.

Part Number: IRLR3105PbF, IRLU3105PbF

Function: 55V Single N-Channel Power MOSFET

Package: D-Pak Type

Manufacturer: IR, Infineon Technologies

Image and pinouts

IRLR3105 datasheet pdf

Description

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features

1. Planar cell structure for wide SOA

2. Optimized for broadest availability from distribution partners

3. Product qualification according to JEDEC standard

4. Silicon optimized for applications switching below <100kHz

5. Industry standard through-hole power package

Benefits

1. Increased ruggedness

2. Wide availability from distribution partners

3. Industry standard qualification level

4. High performance in low frequency applications

5. Standard pinout allows for drop in replacement

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 55 V

2. Gate to source voltage : VGSS = ± 16 V

3. Drain current : ID = 25 A

4. Drain power dissipation : PD = 57 W

5. Single pulse avalanche energy : Eas = 61 mJ

6. Channel temperature : Tch = 175 °C

7. Storage temperature : Tstg = -55 to +175 °C

Applications

The IRLR3105 MOSFET is power switching applications, including DC-DC converters, motor control, load switching, and power management in automotive, industrial, and consumer electronics.

IRLR3105 Datasheet PDF

IRLR3105 pdf

K2508 PDF Datasheet – 250V, 13A, N-Ch, MOSFET, Transistor

Part Number: K2508, 2SK2508 ( = TK13A25D )

Function: 250V, 13A, N-Channel MOSFET

Package: TO 220, TO-220SIS Type

Manufacturer: Toshiba Semiconductor

Images:

K2508 MOSFET Transistor

Description

K2508 is 250V, 13A, Silicon N-Channel MOS Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1. Low drain-source ON resistance : RDS (ON) = 0.18 Ω (typ.)

2. High forward transfer admittance : |Yfs| = 13 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 250 V)

4. Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS =250 V

2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 250 V

3. Gate-source voltage: VGSS = ±20 V

4. Drain power dissipation (Tc = 25°C): PD = 45 W

5. Single pulse avalanche energy : EAS = 148 mJ

6. Avalanche current : IAR = 13 A

7. Repetitive avalanche energy : EAR = 4.5 mJ

Pinout

K2508 datasheet pinout

 

Applications:

1. Switching Regulator

2. DC-DC Converter and Motor

K2508 PDF Datasheet


 

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