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IRL540N is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is commonly used in electronic circuits as a switch or amplifier.

Function: 100V, 36A, HEXFET MOSFET

Package: TO-220AB Type

Manufacturer: International Rectifier, a semiconductor company that specialized in power management technology, was acquired by Infineon Technologies AG in 2015.

For additional details, please refer to the preview image and the accompanying PDF file.

Images

IRL540N pinout datasheet

What is IRL540N?

It is designed to handle high currents and voltages, making it suitable for a wide range of applications. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

1. Maximum voltage rating of 100 volts
2. Maximum current rating of 36 amps
3. Low on-resistance (Rds(on))
4. Fast switching speed
5. High input impedance

Advantages

It is high current and voltage handling capabilities, which make it suitable for use in high-power circuits. Its fast switching speed also makes it ideal for use in circuits that require fast switching times.

Disadvantages

Its high input impedance can make it susceptible to electrostatic discharge (ESD) damage, and its sensitivity to voltage spikes and surges may require additional protective measures in some circuits.

Absolute maximum ratings ( Ta=25°C )

1. Drain to source Voltage: VDSS = 100 V

2. Gate to source Voltage: VGSS = ± 16 V

3. Drain current: ID = 36 A

4. Power Dissipation: Pd = 140 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

Other data sheets are available within the file: IRL540

IRL540N Datasheet PDF

Description

K30A06J3A is Silicon N Channel MOS Type Field Effect Transistor.

1. This indicates the maximum drain-source voltage (Vds) that the MOSFET can withstand. In this case, the MOSFET is designed to handle a maximum voltage of 60 volts.

2. This refers to the maximum drain current (Id) that the MOSFET can handle. It represents the maximum continuous current flowing from the drain to the source when the MOSFET is fully turned on and conducting.

N-channel MOSFETs are widely used in various electronic applications, particularly in power electronics and switching circuits. They are commonly used as electronic switches to control the flow of current in different electronic devices and systems.

Features:

1. Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.)

2. High forward transfer admittance: |Yfs| = 34 S (typ.)

3. Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)

4. Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA

K30A06J3A pdf mosfet

Absolute Maximum Ratings (Tc = 25°C)

1. Drain to source Voltage: VDSS = 60 V

2. Gate to source Voltage: VGSS = ± 20 V

3. Drain current: ID = 30 A

4. Drain Power Dissipation: Pd = 25 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

MOSFET

IRL540N Datasheet – 100V, 36A, HEXFET MOSFET