IRF540N Datasheet – 33A, 100V, Power MOSFET – Fairchild

What is IRF540N?

This is an N-channel MOSFET with a voltage rating of 100V and a current rating of 33A. It has a low on-resistance of 44mOhm, which allows it to handle high power and reduce power loss.

The IRF540N is commonly used in electronic devices such as audio amplifiers, power supplies, and motor control circuits.

Function: 33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET

Package: TO-220AB Type

Manufacturer: Fairchild Semiconductor

Image

irf540n-datasheet-pinout

 

Description

Advanced HEXFET Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

This is an N-channel MOSFET with a voltage rating of 100V and a current rating of 33A.

Features

1. Ultra Low On-Resistance
-rDS(ON)= 0.040Ω, VGS = 10V

2. Simulation Models
– Temperature Compensated PSPICE™ and SABER© Electrical Models
– Spice and SABER© Thermal Impedance Models

3. Peak Current vs Pulse Width Curve

4. UIS Rating Curve

 

Absolute Maximum Ratings ( Tc = 25°C )

1. Drain to Source Voltage : Vdss = 100 V
2. Drain to Gate Voltage (R GS = 20kΩ) : Vdgr = 100 V
3. Gate to Source Voltage : Vgs = ±20 V
4. Drain Current (Tc=25’C, Vgs=10V): Id = 33A

QnA

Q1: Can the IRF540N be used for motor control applications?

A1: Yes, It is suitable for use in motor control circuits. Its high current rating and low on-resistance make it well-suited for such applications.

IRF540N Datasheet

IRF540N pdf


 

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IRF740 Datasheet – N-Channel, 400V, 10A, Power MOSFET

What is IRF740?

This is one of the types of MOSFETs and is a kind of transistor. This is a power MOSFET used for switching and amplification applications. It is an N-channel MOSFET with a voltage rating of 400V and a current rating of 10A.

Function: N-CHANNEL 400V, 0.48 Ohm, 10 A, PowerMESH MOSFET

Package: TO-220 Type

Manufacturer: STMicroelectronics

See the preview image and the IRF740 Datasheet file for more information.

Image

IRF740 datasheet transistor

Description

The IRF740 is N-Channel, 400V, 10A, Power MOSFET.

The PowerMESH II is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

Pinouts:

IRF740 datasheet

Features

1. Exceptional dv/dt capability
2. 100% avalanche tested
3. Low gate charge
4. Very low intrinsic capacitances

Advantages

1. Its TO-220 package provides good thermal dissipation and makes it easy to mount on a heatsink.
2. It has a high voltage rating compared to the IRF640, making it suitable for high-voltage applications.

Disadvantages

1. The IRF740 has a relatively high gate capacitance, which may limit its use in high-frequency switching applications.

2. It is an N-channel MOSFET, which means it requires a positive gate voltage to turn on, making it incompatible with some circuits that require a negative gate voltage.

 

Applications

1. HIGH CURRENT SWITCHING
2. UNINTERRUPTIBLE POWER SUPPLY (UPS)
3. DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

components

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 400 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 1.0 A
4. Drain power dissipation : PD = 125 W
8. Channel temperature: Tch = 150 °C
9. Storage temperature: Tstg = -65 to +150 °C

 

Other data sheets are available within the file: IRF740FI

IRF740 Datasheet PDF Download

IRF740 pdf

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