Part Number: K1933

Function: 10A, 900V, Silicon N-Channel MOSFET

Package: TO-3P Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

 

Description

This is 900V, 10A, N-Channel MOSFET.

Features

1. Low on-resistance
2. High speed switching
3. No secondary breakdown
4. Suitable for Switching regulator

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V
2. Gate to source voltage: VGSS = ±30 V
3. Drain current: ID = 10 A
4. Drain peak current : ID(pulse) = 30 A
5. Body to drain diode reverse drain current : IDR = 10 A
6. Channel dissipation: Pch = 150 W

Application

1. High speed power switching

Other data sheets are available within the file: 2SK1933

K1933 Datasheet PDF Download

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• General-Purpose Operational Amplifier

Part Number: 9T15GH

Function: 20V, 12.5A, POWER MOSFET

Package: TO-251, TO-252 Type

Manufacturer: Advanced Power Electronics Corp

Image:

Description

This is 20V, 12.5A, N-Channel Power MOSFET.

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Image and Pinouts:

Features

1. Low Gate Charge BVDSS 20V

2. Capable of 2.5V Gate Drive RDS(ON) 50mΩ

3. Single Drive Requirement ID 12.5A

4. RoHS Compliant

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 20 V

2. Gate to source voltage: VGSS = ± 16 V

3. Drain current: ID = 12.5 A

4. Total Power Dissipation: Pd = 12.5 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: AP9T15GH, AP9T15J, AP9T15GJ

9T15GH Datasheet PDF Download