MOSFET

MDS1660 Datasheet PDF – 30V, 11.2A, MOSFET – Magnachip

Posted on by pinout

Part Number: MDS1660, MDS1660URH ( = AO4468 )

Function: 30V, 11.2A, Power Driver MOSFET

Package: SOP 8 Pin ( SMD )

Manufactueres : Magnachip

Image:

MDS1660 Datasheet

Description

This is 30V, 11.2A, N-Channel MOSFET.

The MDS1660 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.

Pinout

MDS1660 pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 11.2 A

4. Power Dissipation: Pd = 3.1 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

MDS1660 Datasheet


 

Posts related to MOSFET

Part number Description
MDF5N50F Datasheet N-Channel MOSFET
MP3401A P-Channel Enhancement Mode MOSFET
SVF7N65F 650V N-CHANNEL MOSFET
18N50 Datasheet Vdss=500V, N-Channel Mosfet Transistor
MDF4N60B N-Channel Trench MOSFET
APM2518NU Datasheet N-Channel Enhancement Mode MOSFET
MDD1752 Datasheet PDF 40V, N-Ch, MOSFET

 

Related articles across the web

2N7002T Datasheet PDF – 60V, N-channel MOSFET

Posted on by pinout

Part Number: 2N7002T

Function: 60V, N-channel MOSFET

Package: SOT-523 Type

Manufacturer: Diodes Incorporated.

Image and Pinouts:

2N7002T datasheet

 

Description

This is a N-channel enhancement mode field effect transistor.

This new generation MOSFET has been designed to minimize the on state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications:

1. DC-DC Converters

2. Power management functions

3. Battery Operated Systems and Solid-State Relays

4. Drivers: Relays, Solenoids, Lamps, Hammers, Displays Memories, Transistors, etc

Features

1. Low On-Resistance

2. Low Gate Threshold Voltage

3. Low Input Capacitance

4. Fast Switching Speed

5. Low Input/Output Leakage

6. Ultra-Small Surface Mount Package

7. Totally Lead Free, Full RoHS Compliant

8. Halogen and Antimony Free. “Green” Device

9. Qualified to AEC-Q101 Standards for High Reliability

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 115 mA

4. Total Power Dissipation: Pd = 150 mW

5. Channel temperature: Tch =  150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Mechanical Data :

1. Case: SOT523

2. Case Material: Molded Plastic.“Green” Molding Compound.

3. Moisture Sensitivity: Level 1 per J-STD-020

4. Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating).

5. Weight: 0.002 grams (approximate)

Other data sheets are available within the file:

2N7002T13F, 2N7002T7F, 2N7002TQ13F, 2N7002TQ-7-F

2N7002T Datasheet PDF Download

2N7002T pdf