MOSFET archives - Page 327 of 1244

Features

1. Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.)
2. High forward transfer admittance: |Yfs| = 6.0 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 12 A
4. Drain peak current : ID(pulse) = 48 A
5. Drain power dissipation : Pd = 45 W
6. Single pulse avalanche energy : Eas = 365 mJ
7. Channel temperature: Tch = 150°C
8. Storage temperature: Tstg = -55 to +150 °C

Pinout

Applications :

1. Switching Regulator

Part Number: 2SK3639

Function: 20V, 64A, SWITCHING N-CHANNEL POWER MOSFET

Package: TO-252 Type

Manufacturer: NEC ( Renesas Technology )

Image and Pinouts:

2SK3639 datasheet

Description

The 2SK3639 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

Features

1. Low on-state resistance :
(1) RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 32 A)
(2) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 32 A)

2. Low Ciss: Ciss = 2400 pF TYP.

Absolute Maximum Ratings ( Ta = 25°C )

1. Drain to Source Voltage (VGS = 0 V) : VDSS = 20 V

2. Gate to Source Voltage (VDS = 0 V) : VGSS = ±20 V

3. Drain Current (DC) (Tc = 25°C) : ID(DC) = ±64 A

4. Drain Current (pulse) Note : ID(pulse) = ±256 A

5. Total Power Dissipation (Tc = 25°C) : PT1 = 40 W

6. Total Power Dissipation : PT2 = 1.0 W

Other data sheets are available within the file: 2SK3639ZK, K3639, K3639-ZK

MOSFET

K12A500 PDF Datasheet – N-Ch, 500V, MOSFET – TK12A50D

Description

Features

K12A500 Datasheet PDF

Related articles across the web

2SK3639 Datasheet PDF – 20V, 64A, N-Ch, MOSFET – NEC

Description

2SK3639 Datasheet PDF Download