Part Number: STP2HNC60FP
Function: 600V, 2.2A, N-Channel MOSFET
Package: TO-220, TO-220FP Type
Manufacturer: STMicroelectronics
Image and Pinouts:
Description
This is 600V, 4 Ohm, 2.2A, N-CHANNEL MOSFET.
The PowerMESH is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness.
Features
1. TYPICAL RDS(on) = 4 Ω
2. EXTREMELY HIGH dv/dt CAPABILITY
3. 100% AVALANCHE TESTED
4. NEW HIGH VOLTAGE BENCHMARK
5. GATE CHARGE MINIMIZED
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 2.2 A
4. Total Dissipation : Ptot = 30 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -65 to +150 °C
Applications:
1. HIGH CURRENT, HIGH SPEED SWITCHING
2. SWITH MODE POWER SUPPLIES (SMPS)
3. DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
Other data sheets are available within the file: P2HNC60F, STP2HNC60, STP2HNC60F
STP2HNC60FP Datasheet PDF Download
