02N60P PDF Datasheet – 600V, 2A, MOSFET – SSM02N60P

This post explains for the MOSFET.

The Full Part Number is SSM02N60P, 02N60P.

The package is TO-220 type.

The function of this semiconductor is 600V, N-Channel MOSFET.

The manufacturers of this product is Silicon Standard.

See the preview image and the PDF file for more information.

 

Preview images :

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02N60P transistor datasheet

Description

The 02N60P is 600V, 2A, N-Channel Power MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor). This is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.

The TO-220 package is widely preferred for commercial and industrial applications. The SSM02N60P is well suited for DC/DC and AC/DC converters in telecom, industrial and consumer applications.

Features

1. Repetitive-avalanche rated

2. Fast-switching

3. Simple drive requirement

 

02N60P mosfet pdf

Absolute Maximum Ratings :

1. Drain-Source Voltage : VDS = 600 V

2. Gate-Source Voltage : VGS = ± 20 V

3. Drain current: ID = 2 A

4. Total Power Dissipation: Pd = 39 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Notes:

1. Pulse width limited by safe operating area.

2. Starting Tj=25oC , VDD=50V , L=60mH , RG=25Ω , IAS=2A.

3. Pulse width <300us , duty cycle <2%.

 

02N60P PDF Datasheet

K1118 PDF Datasheet – N-Ch, 600V, 6A, MOSFET – 2SK1118

The Full Part Number is 2SK1118.

The function of this semiconductor is 600V, Silicon N Channel MOSFET.

The package is TO-220 Type

The manufacturers of this product is Toshiba.

See the preview image and the PDF file for more information.

Preview images :

1 page
K1118 transistor pinout

Description

The K1118 is 600V, Silicon N-Channel MOSFET(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1. 4-Volt Gate Drive

2. Low Drain-Source ON Resistance – Rds(on) = 0.95 Ohm ( Typ. )

3. High Forward Transfer Admittance

4. Low Leakage Current

5. Enhancement-Mode

K1118 pdf datasheet

Absolute Maximum Ratings ( Ta = 25°C )

1. Drain-Source Voltage : Vdss = 600V

2. Drain-Gate Voltage : Vdgr = 600V

3. Gate-Source Voltage : Vgss = ± 30V

4. Drain Current : Id =6 A

4. Drain Power Dissipation: Pd = 45 W ( Tc = 25°C )

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. High Speed, High Current DC-DC Converter

2. Relay Drive and Motor Drive

K1118 PDF Datasheet


 

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