Part Number: MDF7N65B

Function: N-Channel MOSFET, 650V, 7.0A, 1.35Ω

Package: TO-220F Type

Manufacturer: MagnaChip Semiconductor

Images

Description

These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed  switching and general purpose applications.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-Source Voltage : VDSS = 650 V
2. Gate-Source Voltage :VGSS = ±30 V
3. Continuous Drain Current (Tc=25°C) : ID = 7.0 A
4. Pulsed Drain Current : IDM = 28 A
5. Power Dissipation (Tc=25°C): PD = 42W
6. Repetitive Avalanche Energy : EAR = 13.1 mJ
7. Peak Diode Recovery dv/dt : dv/dt = 4.5 V/ns
8. Single Pulse Avalanche Energy : EAS = 212 mJ
9. Junction and Storage Temperature Range : TJ, Tstg = -55~150 °C

Pinout

Applications

1. Power Supply
2. PFC
3. High Current, High Speed Switching

MDF7N65B Datasheet PDF Download

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Part Number: 15N03H

Function: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Package: TO-252 Type

Manufacturer: Advanced Power Electronics Corp

Image and Pinouts:

Description

The TO-252 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP15N03J) is available for low-profile applications.

Pinouts:

Features

1. Low Gate Charge
2. Simple Drive Requirement
3. Fast Switching

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 15 A
4. Total Power Dissipation: Pd = 28 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: AP15N03H, AP15N03J

 

 

15N03H Datasheet PDF Download