Part Number: IRL2203N

Function : HEXFET Power MOSFET

Package: TO-220AB Type

Manufacturer: IRF, Infineon

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Description

The IRL2203N is 30V, 116A, HEXFET Power MOSFET.

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Pinout

Features

1. Advanced Process Technology

2. Ultra Low On-Resistance

3. Dynamic dv/dt Rating

4. 175°C Operating Temperature

5. Fast Switching

6. Fully Avalanche Rated

7. Lead-Free

 
Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 16 V

3. Drain current: ID = 116 A

4. Power Dissipation: Pd = 180 W

5. Channel temperature: Tch =  175 °C

6. Storage temperature: Tstg = -55 to +175 °C

IRL2203N Datasheet PDF

 

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