Part Number: 2N7000
Function: 60V, N-Channel, TMOS FET Transistor
Package: TO 92 Type
Manufacturer: Motorola Semiconductor
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Description
The 2N7000 and BS170 are N-channel, enhancement-mode MOSFETs used for low-power switching applications. The two are nearly identical except that the leads are arranged differently and the current ratings are somewhat different; they are sometimes listed together on the same datasheet, along with other variants 2N7002, VQ1000J, and VQ1000P.
The device is a widely available and popular part, often recommended as useful and common components to have around for hobbyist use, along with such other popular discrete semiconductors as the 1N4148 and 1N4001 diodes; the 2N2222, 2N3904, and 2N3906 bipolar junction transistors; and the IRF510 power MOSFET. The BS250P is “a good p-channel analog of the 2N7000
Maximum Ratings :
1. Drain Source Voltage : VDSS = 60 Vdc
2. Drain–Gate Voltage (RGS = 1.0 MW): VDGR = 60 Vdc
3. Gate to source voltage: VGSS = ± 30 V
4. Total Power Dissipation : Pd = 350 mW
2N7000 Pinout
Features
1. Free from Secondary Breakdown
2. Low Power Drive Requirement
3. Ease of Paralleling
4. Low CISS and Fast Switching Speeds
5. Excellent Thermal Stability
6. Integral Source-Drain Diode
7. High Input Impedance and High Gain
Applications:
1. Motor Controls
2. Converters
3. Amplifiers
4. Switches
5. Power Supply Circuits
2N7000 Datasheet PDF
