MOSFET

2SK3061 PDF Datasheet – 60V, 70A, N-Ch, MOSFET

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Part Number: 2SK3061

Function: 70A, 60V, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: NEC ( Renesas Technology )

Image and Pinouts:
2SK3061 datasheet

Description

This is 60V, 70A, N-Channel MOSFET.

Features

1. Low on-state resistance
(1) RDS(on)1= 8.5 mΩMAX. (VGS= 10 V, ID= 35 A)
(2) RDS(on)2= 12 mΩMAX. (VGS= 4.0 V, ID= 35 A)

2. Low Ciss : Ciss= 5200 pF TYP.
3. Built-in gate protection diode
4. Isolated TO-220 package

Absolute maximum ratings ( Ta=25 °C )

1. Drain to Source Voltage : VDSS = 60 V
2. Gate to Source Voltage : VGSS(AC) = ±20 V
3. Gate to Source Voltage : VGSS(DC) = +20, –10 V
4. Drain Current (DC) : ID(DC) = ±70 A
5. Drain Current (pulse) : ID(pulse) = ±280 A
6. Total Power Dissipation (TC = 25°C) : PT = 35 W
7. Total Power Dissipation (TA = 25°C) : PT = 2.0 W
8. Channel Temperature : Tch = 150 °C
9. Storage Temperature : Tstg = -55 to +150 °C
10. Single Avalanche Current : IAS = 35 A
11. Single Avalanche Energy : EAS = 122.5 mJ

components

Applications:

This product is N-Channel MOS Field Effect Transistor designed for high current switching application.

Other data sheets are available within the file: K3061

2SK3061 Datasheet PDF Download


2SK3061 pdf

 

IRF3710 Pinout – Vdss=100V, Power MOSFET – IRF

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Part Number: IRF3710

Function: HEXFET Power MOSFET ( Vdss=100V, Id=57A )

Package: TO-220AB Pin Type

Manufacturer: International Rectifier

Description

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

IRF3710 Pinout

IRF3710 pinout

 

Features

1. Advanced Process Technology
2. Ultra Low On-Resistance
3. Dynamic dv/dt Rating
4. 175°C Operating Temperature
5. Fast Switching
6. Fully Avalanche Rated

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 57 A
4. Total Power Dissipation: Pd = 200 W
5. Channel temperature: Tch = 175 °C
6. Storage temperature: Tstg = -55 to +175 °C

 

IRF3710 Datasheet


 

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