MOSFET

10N60 Datasheet – 600V, 10A, N-ch, MOSFET ( PDF )

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: 10N60, FQPF10N60, FQPF10N60C

Function : N-Channel Power MOSFET ( 600V,10A )

Package: TO-220, TO-220F Type

Manufacturer: Nell Semiconductor, Fairchild

This post explains for the transistor 10N60.

Image

10N60 MOSFET Transistor

Description

This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

 

Pinout

10N60 pinout datasheet

Features

1. RDS(ON) = 0.8Ω@VGS = 10V

2. Ultra low gate charge(57nC max.)

3. Low reverse transfer capacitance (CRSS = 18pF typical)

4. Fast switching capability

5. 100% avalanche energy specified

6. Improved dv/dt capability

7. 150°C operation temperature

10N60 Datasheet

 


 

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K3565 Datasheet – 900V, 5A, N-Ch MOSFET – Toshiba ( PDF )

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K3565, 2SK3565

Function: N-channel MOSFET ( 900V, 5A, 45W )

Package: TO-220 Type

Manufacturer: Toshiba

Image

K3565 mosfet

Description

This is Silicon N Channel MOS Type Field Effect Transistor.

Features

1. Low drain-source ON resistance: RDS (ON)= 2.0 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 4.5 S (typ.)

3. Low leakage current: IDSS= 100 μA (VDS= 720 V)

4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Applications: Switching Regulator

Pinout

K3565 datasheet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 900 V
2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 900 V
3. Gate-source voltage: VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C): PD = 45 W
5. Single pulse avalanche energy : EAS = 595 mJ
6. Avalanche current : IAR = 5 A
7. Repetitive avalanche energy : EAR = 4.5 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature range : Tstg = -55~150 °C

K3565 Datasheet


 

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