This post explains for the MOSFET.

The Part Number is 2SK4100LS, 2SK4100.

The function of this semiconductor is 650V, N-Channel Silicon MOSFET.

The package is TO-220FI(LS) Type

Manufacturer: Sanyo Semicon Device

Preview images :

Description

2SK4100 is 650V, 6A, N-Channel Silicon MOSFET(Metal Oxide Semiconductor Field Effect Transistor).

This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

• Low ON-resistance, low input capacitance, ultrahigh-speed switching.

• Adoption of high reliability HVP process.

• Attachment workability is good by Mica-less package.

• Avalanche resistance guarantee.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 650 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 6 A

4. Allowable Power Dissipation: Pd = 2 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. General-Purpose Switching Device

2SK4100 PDF Datasheet

Posts related to ‘ MOSFET ‘

Part number	Description
IRFR420	500V, MOSFET, Transistor ( PDF )
K2085	100V, 1.0A, N-Ch, MOSFET
IRFD1Z0	0.5A, 100V, N-Ch, MOSFET – Harris
K2373	30V, 0.2A, N-Channel, MOSFET, 2SK2373
IRF4905	P-Ch, 55V, 74A, MOSFET
MDF4N60	600V, N-Channel MOSFET
K3561	N-ch, 500V, 8A, MOSFET, Transistor
BSZ019N03LS	30V, 40A, MOSFET, 019N03L
APM2518NU	25V, 50A, N-Channel Mode MOSFET
IRF540	Vdss = 100V, 33A, Power MOSFET

 

What is K4A60DA?

It is manufactured by several companies, including Toshiba, and has a maximum voltage rating of 600 volts and a maximum current rating of 3.5 amperes.

The K4A60DA is commonly used in power supply circuits, audio amplifiers, and other applications that require switching or amplification of high voltages and currents.

The full part number is TK4A60DA.

The function of this semiconductor is 600V, N-Channel MOSFET.

The manufacturers of this product is Toshiba.

See the preview image and the PDF file for more information.

Preview images :

1 page

Description

This is 600V, 3.5A, Silicon N-Channel MOSFET. The K4A60DA transistor is designed with a high voltage capability and a low on-resistance, which makes it suitable for use in high-power applications. Its fast switching speed and high reliability make it a popular choice for use in switching power supplies, audio amplifiers, and other electronic circuits that require high power handling capabilities.

Advantages Vs Disadvantages

Advantages:

1. High Voltage Rating: High maximum voltage rating of 600 volts, making it suitable for use in circuits that require high voltage handling.

2. Low On-Resistance: Low on-resistance, which means that it can handle high currents with minimal power loss.

3. Fast Switching Speed: Fast switching speed, which makes it suitable for use in circuits that require fast switching times.

4. High Reliability: It is designed with high reliability and is suitable for use in applications that require long-term performance.

Disadvantages:

1. Sensitive to Static Electricity: Sensitive to static electricity, and improper handling can damage the device.

2. Limited Current Rating: Maximum current rating of 3.5 amperes, which limits its use in high-current applications.

3. Higher Cost: Generally more expensive than other MOSFET transistors with similar specifications, which can make it less cost-effective for some applications.

Features

1. Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.)

2. High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)

3. Low leakage current: IDSS = 10 μA (VDS = 600 V)

4. Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 600 V

2. Gate-source voltage: VGSS = ±30 V

3. Drain current : DC (Note 1) ID = 3.5A,  Pulse (t = 1 ms) (Note 1) IDP = 14 A

4. Drain power dissipation (Tc = 25°C): PD = 35 W

5. Single pulse avalanche energy (Note 2) : EAS = 158 mJ

6. Avalanche current : IAR = 3.5 A

7. Repetitive avalanche energy (Note 3) : EAR = 3.5 mJ

8. Channel temperature: Tch = 150 °C

9. Storage temperature range : Tstg = −55 to 150 °C

 

Applications:

1. Switching Regulator

K4A60DA PDF Datasheet

Posts related to ‘ MOSFET ‘

Part number	Description
PHD98N03LT	25V, 75A, N-channel MOSFET
STF3HNK90Z	900V, 3A, MOSFET – ST
FQP10N60C	600V, 9.5A, N-Ch, MOSFET, Transistor
BUZ71	14A, 50V, N-Ch, MOSFET, Transistor
SPP04N60C3	650V, 4.5A, MOSFET – Infineon
W9NK95Z	W9NK95Z Transistor – 950V, 7A, MOSFET (STW9NK95Z)
NDT2955	60V, 2.5A, P-ch, MOSFET
T40N03G	45A, 25V, N-Ch, MOSFET
16N50C3	560V, MOSFET – SPP16N50C3
RU7088A	65V, N-Ch, MOSFET – Ruichips