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Part Number: P7NA60

Function: 600V, N-Channel Enhancement Mode Fast Power MOSFET

Package: TO-220, ISOWATT220 Type

Image and Pinouts:

P7NA60 datasheet pinout

Description

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on)and gate charge, unequalled ruggedness and superior switching performance.

components

Features

1. TYPICAL RDS(on) = 0.92 W
2. ± 30V GATE TO SOURCE VOLTAGE RATING
3. 100% AVALANCHE TESTED
4. REPETITIVE AVALANCHE DATA AT 100°C
5. LOW INTRINSIC CAPACITANCES
6. GATE GHARGE MINIMIZED
7. REDUCED THRESHOLD VOLTAGE SPREAD

Applications

1. HIGH CURRENT, HIGH SPEED SWITCHING
2. SWITCH MODE POWER SUPPLIES (SMPS)
3. DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

Other data sheets are available within the file: P7NA60FI, STP7NA60, STP7NA60FI

P7NA60 Datasheet PDF Download

Features

1. Low on-resistance
2. High speed switching
3. Low drive current
4. No secondary breakdown
5. Suitable for switching regulator, DC-DC converter and motor driver

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 500 V
2. Gate to source voltage: VGSS = ±30 V
3. Drain current: ID = 7 A
4. Drain peak current : ID(pulse) = 28 A
5. Body to drain diode reverse drain current : IDR = 7 A
6. Channel dissipation: Pch = 60 W

Application

1. High speed power switching

Other data sheets are available within the file: 2SK1157, K1157, K1158

MOSFET

P7NA60 Datasheet PDF – 600V, N-Channel MOSFET

Description

P7NA60 Datasheet PDF Download

2SK1158 Datasheet PDF – 500V, 7A, N-Ch, MOSFET

Description

Features

2SK1158 Datasheet PDF Download

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