MOSFET

K13A600 Datasheet – 600V, 13A, MOSFET ( Transistor )

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This is Silicon N-Channel MOSFET.

Part Number: K13A600, TK13A600

Correct Number : K13A60D, TK13A60D

Package: TO-220 Type

Manufacturer: Toshiba

Image:

K13A600 mosfet

Description

This is 600V, 13A, N-Channel MOSFET.

Features

1. Low drain-source ON-resistance: RDS (ON)= 0.33 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 6.5 S (typ.)

3. Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)

4.  Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

K13A600 Pinout

K13A600 datasheet pinout

Absolute Maximum Ratings ( Ta = 25º C )

1. Drain-source voltage : VDSS = 600 V
2. Drain power dissipation :  PD = 50 W
3. Single pulse avalanche energy : Eas = 511 mJ
4. Channel temperature: Tch = 150 °C
5. Storage temperature range : Tstg = -55 to 150 °C

 

Electrical Characteristics

K13A600 Marking

Applications:

1. Switching Regulator

K13A600 Datasheet


 

K13A600 pdf

 

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K1517 MOSFET – 450V, 20A, Transistor, TO-3P ( PDF )

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Part Number: K1517, 2SK1517

Function: 450V, 20A, N-Channel MOSFET

Package: TO-3P Type

Manufacturer: Renesas Electronics

Image and Pinouts:

K1517 datasheet

 

Description

This is a 450V, 20A, Silicon N-Channel MOSFET.

Features

1. Low on-resistance

2. High speed switching

3. Low drive current

4. Built-in fast recovery diode (trr = 120 ns)

5. Suitable for motor control, switching regulator, DC-DC converter

 

Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 450 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 20 A
4. Channel dissipation: Pch = 120 W
5. Channel temperature: Tch =  150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: 2SK1517, 2SK1518, K1518

K1517 Datasheet PDF Download


K1517 pdf