MOSFET

2SK2645-01MR Datasheet – 600V, N-Ch, MOSFET ( PDF )

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: 2SK2645-01MR

Function: 600V, 9A, N-Channel MOSFET ( Transistor )

Package: TO-220F-15 Type

Manufacturer: Fuji Electric

Pinouts:

2SK2645-01MR datasheet

Description

This is N-Channel MOSFET.

Features

1. High speed switching
2. Low on-resistance
3. No secondary breadown
4. Low driving power
5. Avalache-proof

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 9 A
4. Max. Power Dissipation: Pd = 50 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

Applications

1. Switching Regulators
2. UPS
3. DC-DC converters
4. General Purpose Power Amplifier

Other data sheets are available within the file: 2SK2645, K2645, K2645-01MR

2SK2645-01MR Datasheet PDF Download

2SK2645-01MR pdf


 

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BSS84 Datasheet PDF – 50V, P-Ch, MOSFET, Transistor, SOT-23

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Part Number: BSS84

Function: -50V, -0.13A, P-Channel MOSFET.

Package: SOT-23 Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

BSS84 datasheet

 

Description

This is -50V, -0.13A, P-Channel Enhancement Mode Field-Effect Transistor.

This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology.

This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product
is particularly suited to low-voltage applications requiring a low-current high-side switch.

 

Features

1. -0.13 A, -50 V, RDS(ON) = 10 Ωat VGS= -5 V

2. Voltage-Controlled P-Channel Small-SignalSwitch

3. High-Density Cell Design for Low RDS(ON)

4. High Saturation Current

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 50 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = – 0.13 A

4. Maximum Power Dissipation: Pd = 0.36 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: BSS-84

BSS84 Datasheet PDF Download

BSS84 pdf