MOSFET

IRFP260N Datasheet – 200V, 50A, HEXFET MOSFET ( PDF )

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: IRFP260N

Function : Vdss=200V, Id=50A, HEXFET Power MOSFET

Package: TO-247AC type

Manufacturer: International Rectifier, Infineon Technologies

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Datasheet IRFP260N mosfet

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

 

IRFP260N Pinout

IRFP260N datasheet pinout

Features

1. Advanced Process Technology

2. Dynamic dv/dt Rating

3. 175°C Operating Temperature

4. Fast Switching

5. Fully Avalanche Rated

6. Ease of Paralleling

7. Simple Drive Requirements

 

Absolute Maximum Ratings (TC = 25°C)

Parameter Symbol Value Unit
Drain–Source Voltage VDSS 200 V
Gate–Source Voltage VGSS ±20 V
Continuous Drain Current (TC=25°C) ID 50 A
Pulsed Drain Current IDM 200 A
Power Dissipation PD 300 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg −55 ~ +150 °C

IRFP260N Datasheet

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20N60S1 Datasheet – 600V, N-ch, Power MOSFET

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20N60S1 is one of the types of MOSFETs and is a kind of transistor.

Part Number: FMP20N60S1

Function: 600V, 20A, N-Channel enhancement mode power MOSFET

Package: TO-220AB Type

Manufacturer: Fuji Electric

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20N60S1 mosfet fuji

Description

Transistor 20N60S1 is Super J-MOS series, N-Channel enhancement mode power MOSFET.

With a drain–source breakdown voltage of 600 V and continuous drain current of 20 A, it is well suited for switch-mode power supplies (SMPS), PFC stages, industrial power conversion, lighting ballasts, and motor drives.

 

Features

1. Low on-state resistance

2. Low switching loss

3. easy to use (more controllabe switching dV/dt by Rg)

 

Absolute Maximum Ratings at TC=25°C

1. Drain-Source Voltage : Vds = 600V

2. Gate-Source Voltage: Vgss = ±30

3. Continuous Drain Current: Id = 20A

4. Repetitive and Non-Repetitive Maximum Avalanche Current : IAR = 6.6 A

5. Non-Repetitive Maximum Avalanche Energy : EAS = 472.2 mJ

6. Junction Temperature: Tch=   −55 ~ +150°C

 

20N60S1 Pinout

20N60S1 datasheet pinout

 

Applications

1. Inverters and Converters for solar, UPS, or industrial drives

2. Server, Telecom, Power conditioner system, Power supply

3.High-Voltage DC Motor Controller

 

20N60S1 Datasheet