MOSFET

K8A60DA Datasheet – 600V, Nch MOSFET – Toshiba

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K8A60DA

Function: 600V, 7.5A, Silicon N Channel MOSFET Type

Package: TO-220 Type

Manufacturer: Toshiba

Image :
K8A60DA image

( Marking Number : TK8A60DA -> K8A60DA  )

Description

This is Silicon N Channel MOS Type Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor).  K8A60DA transistor is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1.  Low drain-source ON resistance: RDS (ON)= 0.8 Ω(typ.)

2.  High forward transfer admittance: ⎪Yfs⎪= 4.0 S (typ.)

3.  Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)

4.  Enhancement-mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Pinout

K8A60DA datasheet pinout

Applications:

1. Switching Regulator

K8A60DA Datasheet PDF


 

Other data sheets are available within the file: TK8A60DA, TK8A600A

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W20NM50 PDF – 550V, 20A, MOSFET- STW20NM50

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Part Number: W20NM50, STW20NM50

Function: N-Channel, 550V, 20A, MOSFET

Package: TO-247 Type

Manufacturer: STMicroelectronics

Images:STW20NM50 pdf pinout

Description

W20NM50 is N-CHANNEL, 500V – 0.20Ω – 20A, MDmesh Power MOSFET.

The MDmesh is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. Applications The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

Features

1. TYPICAL RDS(on) = 0.20Ω

2. HIGH dv/dt AND AVALANCHE CAPABILITIES

3. 100% AVALANCHE TESTED

4. LOW INPUT CAPACITANCE AND GATE CHARGE

5. LOW GATE INPUT RESISTANCE

6. TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS […]

STW20NM50 datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 A

3. Drain current: ID = 20 A

4. Total Power Dissipation: Ptot = 214 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -65 to +150 °C

Applications:

The MDmesh family is very suitable for increasing power density of high voltage converters allowing
system miniaturization and higher efficiencies.

W20NM50 PDF Datasheet