3DD4202BD Datasheet – 400V, NPN Transistor – JILIN SINO

Part Number: 3DD4202BD, 4202BD

Function: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Package: TO-92, TO-251, TO-126 Type

Manufacturer: JILIN SINO MICROELECTRONICS ( www.hwdz.com.cn )

Image :
3dd4202bd-npn-transistor

 

Description:

The 3DD4202BD is 400V, NPN Power Transistor. A high-voltage fast-switching NPN power transistor is a type of bipolar junction transistor (BJT) designed for high-voltage applications where fast switching speeds are required. These transistors are commonly used in power electronics, such as in power supplies, motor control circuits, electronic ballasts, and high-frequency switching applications.

When selecting a high-voltage fast-switching NPN power transistor, it is essential to consider parameters such as voltage rating, current rating, switching speed, power dissipation, and package type to ensure compatibility with the application requirements.

Features:

1. High breakdown voltage
2. High current capability
3. High switching speed
4. High reliability
5. RoHS product

 

Pinout:

3dd4202bd-datasheet-pinout

 

Applications:

1. Battery changer
2. Electronic ballasts
3. High frequency switching power supply
4. High frequency power transform
5. Commonly power amplifier

 

Ordering Information:

ordering-information
Absolute Ratings ( Tc=25°C)

1. Collector- Emitter Voltage(VBE=0): Vces = 700V
2. Collector- Emitter Voltage(IB=0): Vceo = 400V
3. Emitter-Base Voltage: Vebo = 9V
4. Collector Current(DC) : Ic = 1.5A
5. Total Dissipation (TO-126) : Pc = 20W

Popular manufacturers of high-voltage fast-switching NPN power transistors include companies like Infineon Technologies, ON Semiconductor, STMicroelectronics, and Toshiba, among others.

3DD4202BD Datasheet


 

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2SC2316 Datasheet PDF – 80V, 6A, NPN Transistor – Sanken

Part Number: 2SC2316

Function: 80V, 6A, NPN Transistor

Package: TO-92, TO-220 Type

Manufacturer: Sanken Electric co.,ltd.

Image:

2SC2316 datasheet

 

Description

This is 80V, 6A, Silicon NPN Triple Diffused Mesa Transistor. Super Beta Transistor.

A Silicon NPN Triple Diffused Mesa Transistor refers to a specific type of bipolar junction transistor (BJT) that is constructed using silicon as the semiconductor material. This transistor structure is known as a mesa transistor, which is characterized by a mesa-shaped structure on the surface of the transistor.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 100 V

2. Collector to Emitter Voltage: Vceo = 80 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 6 A

5. Total Dissipation : Pc = 50 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. General Purpose

Frequently used NPN transistors

Other data sheets are available within the file: 2SC2315, C2315, C2316

2SC2316 Datasheet PDF Download


2SC2316 pdf

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