NPN archives - Page 439 of 1048

Description

High voltage, high speed and high power switching

Absolute Maximum Ratings

1. Collector to base voltage : VCBO = 500 V
2. Collector to emitter voltage : VCEO = 400 V
3. Emitter to base voltage : VEBO = 10 V
4. Collector current : IC = 15 A
5. Collector peak current : IC(peak) = 25 A
6. Base current : IB = 7.5 A
7. Collector power dissipation : PC*1 = 100 W
8. Junction temperature : Tj = 150 °C

Other data sheets are available within the file: C3336

Part Number: BUT11AF

Function : Silicon Diffused Power Transistor

Package: SOT186 Type

Manufacturer: Philips Semiconductors

Image

Description

High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.

Pinout

Quick Reference Data

1. Collector-emitter voltage peak value (VBE = 0 V) : VCESM = 1000 V

2. Collector-emitter voltage (open base) : VCEO = 450 V

3. Collector current (DC) : IC = 5 A

4. Collector current peak value : ICM = 10 A

5. Total power dissipation (Ths < 25 °C) : Ptot = 20 W

6. Collector-emitter saturation voltage : VCEsat = 1.5 V

NPN

2SC3336 Datasheet – Vcbo=500V, NPN Transistor – Hitachi

Description

2SC3336 Datasheet PDF

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BUT11AF Datasheet – Vceo=450V, NPN Transistor – Philips

BUT11AF Datasheet

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