Part Number: A940

Function: – 150V, – 1.5A, PNP Transistor

Package: TO-220 Type

Manufacturer: Elite Enterprises

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Description

A940 is 150V, 1.5A, PNP Epitaxial Silicon Transistor. 

PNP transistors comprise the following key components:

PNP transistors control the flow of a large current (collector current) between the emitter and collector using a small current applied to the base (base current). When a base current flows, the PNP transistor permits the flow of electrons from the emitter to the collector, resulting in an increase in collector current. Reducing the base current reduces the collector current. Consequently, PNP transistors are valuable electronic components for controlling large output currents with small input currents.

Features

1. Complement to C2073

2. Collector-Emitter Voltage: VCEO=-150V

3. Collector Dissipation: PC(max)=1.5W

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 150 V

2. Collector to Emitter Voltage: Vceo = – 150 V

3. Emitter to Base Voltage: Vebo = – 5 V

4. Collector Current: Ic = – 1.5 A

5. Collector Dissipation : Pc = 25 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

A940 PDF Datasheet

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What is B772P?

This is a PNP bipolar junction transistor (BJT) designed for high-speed switching applications.

Part Number: B772P, 2SB772

Function: -30V, -3A, PNP Transistor

Package: TO-126 Type

Manufacturer: NEC

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1 page

Description

The B772P is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver.

 

Advantages Vs Disadvantages

Advantages:

1. High voltage and current capacity

2. Low saturation voltage for efficient switching

3. Complementary NPN transistor available for use in push-pull circuits

Disadvantages:

1. Relatively low DC current gain compared to other transistors

2. May not be suitable for low power applications due to its high power dissipation rating

Features

• Low saturation voltage VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A)

• Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = −2 V, IC = −1 A)

• Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator.

 

2 page

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 40 V

2. Collector to Emitter Voltage: Vceo = – 30 V

3. Emitter to Base Voltage: Vebo = – 5 V

4. Collector Current: Ic = – 3A

5. Collector Dissipation : Pc = 1W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

B772P PDF Datasheet

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