What is 2N5401?

This is a PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. It has a maximum collector current rating of 0.6A, a maximum collector-emitter voltage rating of 150V, and a maximum power dissipation rating of 625mW.

Part Number: 2N5401

Function: -150V, -600mA, PNP Silicon Transistor

Package: TO-92 Type

Manufacturer: ISC, NTE, NXP, AuK

Pinouts:

 

Description

This is General Purpose Si-Epitaxial Planar PNP Transistor. he 2N5401 comes in a TO-92 package and has a low noise figure, making it suitable for use in audio amplifier circuits.

• General purpose amplifier
• High voltage application

Features

• High collector breakdown voltage : VCBO= -160V, VCEO= -160V
• Low collector saturation voltage : VCE(sat)=-0.5V(MAX.)
• Complementary pair with 2N5551
• Junction Temperature: Tj = 150°C
• Storage Temperature: Tsg = -55 ~ +150°C

Advantage Vs disadvantage

Advantage:

1. High voltage and current handling capabilities

2. Low noise and distortion for use in audio amplifier circuits

3. Low power dissipation for efficient operation

4. Availability and cost-effectiveness

Disadvantage:

1. Limited maximum current rating, which makes it unsuitable for high power applications

2. Relatively low maximum frequency rating, which makes it unsuitable for high-speed applications

3. Limited gain bandwidth product, which limits its use in high-frequency amplification circuits

 

Other data sheets are available within the file: N5401

2N5401 Datasheet PDF Download

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What is 2N3905?

This is a PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. Maximum collector current: 0.2A, Maximum collector-emitter voltage: 40V.

Part Number: 2N3905

Function: Small Signal General Purpose PNP Transistor

Package: TO-92 Type

Manufacturer: Unspecified

Image and Pinouts:

 

Description

This is PNP Silicon Epitaxial Transistor. This is commonly used in audio amplifier circuits, voltage regulators, and switching circuits.

Features

1. PNP Silicon Epitaxial Transistor for Switching and Amplifier Applications

2. RoHS Compliance

Advantages Vs Disadvantages

Advantages:

1. High voltage and current handling capabilities
2. Low noise and distortion for use in audio amplifier circuits
3. Low power dissipation for efficient operation

Disadvantages:

1. Limited maximum current rating, which makes it unsuitable for high power applications
2. Relatively low maximum frequency rating, which makes it unsuitable for high-speed applications
3. Limited gain bandwidth product, which limits its use in high-frequency amplification circuits

Mechanical Data :

1. Case:  TO-92, Plastic Package

2. Terminals:  Solderable per MIL-STD-202G, Method 208

3. Weight:  0.18 gram

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 40 V

2. Collector to Emitter Voltage: Vceo = 40 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 200 mA

5. Power Dissipation: Pd = 625 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

2N3905 Datasheet PDF Download

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