Transistor

2N4351 Datasheet PDF – 25V, 100mA, N-Ch, MOSFET, TO-72

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Part Number: 2N4351

Function: N-CHANNEL MOSFET ENHANCEMENT MODE

Package: TO-72 type

Manufacturer: Linear Integrated System

Pinouts:

2N4351 datasheet

 

Description

This is N-Channel MOSFET.

Features

1. DIRECT REPLACEMENT FOR INTERSIL 2N4351
2. HIGH DRAIN CURRENT ID = 100mA
3. HIGH GAIN gfs = 1000μS

ABSOLUTE MAXIMUM RATINGS

1. Maximum Temperatures
(1) Storage Temperature -65 to +200 °C
(2) Operating Junction Temperature -55 to +150 °C

2. Maximum Power Dissipation
(1) Continuous Power Dissipation 375mW

3. Maximum Current
(1) Drain to Source 100mA

4. Maximum Voltages
(1) Drain to Body 25V
(2) Drain to Source 25V
(3) Peak Gate to Source2 ±125V

 

2N4351Datasheet PDF Download


2N4351 pdf

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B772P Datasheet – PNP Transistor, (-)30V, (-)3A ( PDF )

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Part Number: B772P

Function: -30V, -3A, PNP TRANSISTOR

Package: TO-126 Type

Manufacturer: NEC (Renesas Technology)

Image:

B772P datasheet components

Description

The 2SB772, B772P is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver.

components

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 40 V

2. Collector to Emitter Voltage: Vceo = – 30 V

3. Emitter to Base Voltage: Vebo = – 5 V

4. Collector Current: Ic = – 3 A

5. Collector Dissipation : Pc = 1 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Pinouts:

components

Features

1. Low saturation voltage : VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A)

2.  Excellent hFE linearity and high hFE
hFE = 60 to 400 (VCE = −2 V, IC = −1 A)

3. Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required.

Other data sheets are available within the file: 2SB772, 2SB772P, B772

B772P Datasheet PDF Download


B772P pdf