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Features

1. High power gain : Gpe≥8.4dB @Vdd=9.6V,f=450MHz,Pin=30dBm
2. High efficiency:55% typ.
3. Source case type seramic package(connected internally to source)

Absolute maximum ratings ( Tc=25°C )

1. Drain to source voltage : Vdss = 30 V
2. Gate to source voltage : Vgss = ± 20 V
3. Channel dissipation: Pch = 10 W

Applications:

For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets.

Other data sheets are available within the file: K2975

Part Number: BDW84B

Function: -80V, PNP SILICON POWER Darlington Transistor

Pakcage : SOT-93 Package

Manufacturer: Bourns, Inc

Pinouts:

BDW84B datasheet

Description

1. Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D
2. 150 W at 25°C Case Temperature
3. 15 A Continuous Collector Current
4. Minimum hFE of 750 at 3V, 6 A

Absolute maximum ratings at 25°C case temperature

1. Collector-base voltage (IE = 0) : Vcbo = – 80 V
2. Collector-emitter voltage (IB = 0) : Vceo = – 80 V
3. Emitter-base voltage : Vebo = – 5V
4. Continuous collector current : Ic = – 15 A
5. Continuous base current : Ib = – 0.5A
6. Continuous device dissipation at (or below) 25°C case temperature : Ptot = 125 W

Other data sheets are available within the file: BDW83, BDW83A, BDW83C, BDW83D

BDW84B Datasheet PDF Download

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